Intel High-K Metal Gate

<img src="http://www.sweclockers.com/img/ico_note.gif" alt="Nyhet"><b class="red">Intel High-K Metal Gate</b> <small class="small">Onsdag den 5 November 2003<a href="mailto:herman@sweclockers.com"> Herman</a><br /></small>
<a href="http://www.intel.com/pressroom/archive/releases/20031105tech...." target="_blank" >Intel</a> har idag tillkännagivit ett stort genombrott på transistorutveckling. De nya transistorerna använder ett nytt material, kallat High-k, samt nya metallmaterial kallat Gate. Enligt Intel ska de nya transistorerna läcka cirka 100 gånger mindre ström än vanliga CMOS-transistorer. <a href="http://www.dvhardware.net/article2075.html" target="_blank" >DVHardware</a> har lite mer teknisk information för er som är mer intresserade. Den nya transistortekniken ska tidigast användas 2007 på en 0.045 microns tillverkningsprocess.<br><br><I>SANTA CLARA, Calif., Nov. 5, 2003 - Intel Corporation today announced it has identified new materials to replace those that have been used to manufacture chips for more than 30 years. The breakthrough is a significant accomplishment as the industry races to reduce electrical current leakage in transistors -- a growing problem for chip manufacturers as more and more transistors are packed onto tiny pieces of silicon.</I><br><br>Läs pressmeddelandet hos <a href="http://www.intel.com/pressroom/archive/releases/20031105tech...." target="_blank" >Intel</a>.<p>
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