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[SPD Details] <- SIV64X - System Information Viewer V5.41 DESKTOP

SIV64X - MSI MS-7C02 SPD Details for 2 DIMMs took 0.000 seconds on \\DESKTOP - Windows 10 x64 Professional V10.00 Build 18362 19H1

SMBus Total for 2 DIMMs 16GB Banks Manufacturer (DRAM) Part Number Serial # [_]Speed [Y]Suppress Same

0_52 DDR4 SDRAM UDIMM 8GB 16 8Gb Corsair (Samsung) CMK16GX4M2B3200C16 0000-0000 Clock tCL tRCD tRP tRAS tRC |G|CRC Volts
PC4-3200R (1600MHz) JEDEC 1 666.7MHz 9 9 10 22 31 |N|MTS 1.20
2 740.7MHz 10 10 11 25 35 Ranks 1
3 814.8MHz 11 11 12 27 38
4 888.9MHz 12 12 13 30 42
5 963.0MHz 13 13 14 32 45
6 1037.0MHz 14 14 15 35 49
7 1066.1MHz 15 15 15 36 50
XMP 2.0 1 900.9MHz 9 11 11 21 31 1.35
2 1001.0MHz 10 12 12 23 34
3 1101.1MHz 11 13 13 25 38
4 1201.2MHz 12 14 14 27 41
5 1301.3MHz 13 15 15 30 44
6 1401.4MHz 14 16 16 32 48
7 1501.5MHz 15 17 17 34 51
8 1600.0MHz 16 18 18 36 54
0_53 DDR4 SDRAM UDIMM 8GB 16 8Gb ... ... ... ...

SPD Field Description # DIMM #0 DIMM #1

Memory Device SPD Location - SMBus 0_52 SMBus 0_53
CRC Coverage / Bytes Used / Bytes in SPD Device 0 0x23 (125 / 384 / 512) ...
SPD Revision 1 V1.00 ...
SDRAM Device Type 2 12 (DDR4 SDRAM) ...
Module Type (Form Factor) 3 2 (UDIMM) ...
Device Density and Banks 4 0x85 8Gb, 4 Groups, 4 Banks ...
SDRAM Device Addressing 5 0x21 16 Rows + 10 Columns ...
SDRAM Package Type 6 0x00 N D 1 R 0 T 0 ...
SDRAM Optional Features 7 0x08 ...
SDRAM Thermal and Refresh Options 8 0x00 ...
SDRAM Other Optional Features 9 0x00 ...
Reserved 10 0 ...
Module Nominal Voltage, VDD 11 0x03 1.20 Volts ...
Module Organization 12 Ranks 1 Bits 8 ...
Module Memory Bus Width 13 |K|Width 0 + 32 bits ...
Module Thermal Sensor 14 |N|00 ...
Extended module type 15 0 ...
Reserved 16 0 ...
Timebases 17 MTB 0.125ns FTB 0.001ns ...
SDRAM Minimum Cycle Time (tCKAVG min) 18 1.000 ns 0.938 ns 1066MHz ...
SDRAM Maximum Cycle Time (tCKAVG max) 19 1.500 ns 1.500 ns 666MHz ...
CAS Latencies Supported 20 03FC (9 + 10 + 11 + 12 + 13 + 14 + 15 + 16)...
Minimum CAS Latency Time (tAA min) 24 13.500 ns 13.500 ns ...
Minimum RAS to CAS Delay Time (tRCD min) 25 13.500 ns 13.500 ns ...
Minimum Row Precharge Delay Time (tRP min) 26 14.125 ns 14.061 ns ...
Minimum Active to Precharge Delay Time (tRAS min)28 33.000 ns 33.000 ns ...
Minimum Active to Active/Refresh Delay Time (tRC min)29 46.500 ns 46.500 ns ...
Minimum Refresh Recovery Delay Time (tRFC1 min) 30 350.000 ns ...
Minimum Refresh Recovery Delay Time (tRFC2 min) 32 260.000 ns ...
Minimum Refresh Recovery Delay Time (tRFC4 min) 34 160.000 ns ...
Minimum Four Activate Window Time (tFAW min) 36 21.000 ns ...
Minimum Activate to Activate Delay Time (tRRD_S min)38 3.750 ns ...
Minimum Activate to Activate Delay Time (tRRD_L min)39 5.375 ns ...
Minimum CAS to CAS Delay Time (tCCD_L min) 40 5.375 ns ...
Fine Offset for Minimum CAS to CAS Delay Time (tCCD_L min)117 -0.019 ns 5.356 ns ...
Fine Minimum Activate to Activate Delay (tRRD_L min), Same Bank 118 -0.075 ns 5.300 ns ...
Fine Minimum Activate to Activate Delay (tRRD_S min), Different 119 -0.049 ns 3.701 ns ...
Fine Offset for Minimum Active to Refresh Delay Time (tRC min)120 +0.000 ns 46.500 ns ...
Fine Offset for Minimum Row Precharge Delay Time (tRP min)121 -0.064 ns 14.061 ns ...
Fine Offset for Minimum RAS to CAS Delay Time (tRCD min)122 +0.000 ns 13.500 ns ...
Fine Offset for Minimum CAS Latency Time (tAA min)123 +0.000 ns 13.500 ns ...
Fine Offset for SDRAM Maximum Cycle Time (tCKAVG max)124 +0.000 ns 1.500 ns ...
Fine Offset for SDRAM Minimum Cycle Time (tCKAVG min)125 -0.062 ns 0.938 ns ...
CRC for Base Configuration Section 126 |G|51ED ...
Module Manufacturer’s ID Code 320 9E02 (Corsair) ...
Module Manufacturing Location 322 0 ...
Module Manufacturing Date 323 00 00 ...
Module Serial Number 325 0000-0000 ...
Module Part Number 329 CMK16GX4M2B3200C16 ...
Module Revision Code 349 0 ...
DRAM Manufacturer’s ID Code 350 CE80 (Samsung) ...
DRAM Stepping 352 0 ...

XMP V2.0 Profile 1 - 1 DIMM per Channel 388 0x000 MTB 0.125 ns FTB 1.0 ps ...

Module VDD Voltage Level 393 0x0A3 1.35 Volts ...
RFU 394 0x000 0x00 ...
Minimum SDRAM Cycle Time (tCK min) 396 0x005 0.625 ns 1600MHz ...
CAS Latencies Supported (CL Mask) 397 0x43FFC (9 + 10 + 11 + 12 + 13 + 14 + 15 + 16 + 17 + 18 + 19 + 20 + 25)...
Minimum CAS Latency Time (tAA min) 401 0x050 10.000 ns ...
Minimum RAS# to CAS# Delay Time (tRCD min) 402 0x05A 11.250 ns ...
Minimum Row Precharge Time (tRP min) 403 0x05A 11.250 ns ...
Minimum Active to Precharge Time (tRAS min) 405 0x0B3 22.375 ns ...
Minimum Active to Active/Refresh Time (tRC min) 406 0x10E 33.750 ns ...
Minimum Refresh Recovery Wait Time (tRFC1 min) 407 0xAE8 349.000 ns ...
Minimum Refresh Recovery Wait Time (tRFC2 min) 409 0x818 259.000 ns ...
Minimum Refresh Recovery Wait Time (tRFC4 min) 411 0x4F8 159.000 ns ...
Minimum Four Activate Window Delay Time (tFAW min)414 0x0B0 22.000 ns ...
Minimum Activate to Activate Delay Time (tRRD_S min), Different 415 0x01E 3.750 ns ...
Minimum Activate to Activate Delay Time (tRRD_L min), Same Bank 416 0x02D 5.625 ns ...
RSVD 417 0x000 0x00 0x00 0x00 0x00 0x00 ...
RSVD for Supplier Custom Modification in Profile 1 423 0x000 0x00 ...
Minimum Activate to Activate Delay Time (tRRD_L min), Different 425 0x0FB -5.0 ps ...
Minimum Activate to Activate Delay Time (tRRD_S min), Same Bank 426 0x0F6 -10.0 ps ...
Fine Offset for Minimum Active to Refresh Delay Time (tRC min)427 0x0F6 -10.0 ps 33.740 ns ...
Fine Offset for Minimum Row Precharge Delay Time (tRP min)428 0x0F6 -10.0 ps 11.240 ns ...
Fine Offset for Minimum RAS# to CAS# Delay Time (tRCD min)429 0x0F6 -10.0 ps 11.240 ns ...
Fine Offset for Minimum CAS Latency Time (tAA min)430 0x0F6 -10.0 ps 9.990 ns ...
Fine Offset for Minimum SDRAM Cycle Time (tCK min)431 0x000 0.0 ps 0.625 ns 1600MHz ...
RSVD 432 0x000 0x00 0x00 0x00 0x00 0x00 ...
RSVD for Supplier Custom Modification in Profile 1 438 0x000 0x00 ...

[ OK ] [ Copy] [Windows] [Machine] [ DIMMs] [Sensors] [Status] [USB Bus] [ SPD ] [Volumes] [SMB Bus] [PCI Bus] [ALL Dev]

Manufacturing Description Module Manufacturer: Corsair
Module Part Number: CMK16GX4M2B3200C16
Module Series: Vengeance LPX
DRAM Manufacturer: Samsung
DRAM Components: K4A8G085WB-BCPB
DRAM Die Revision / Process Node: B / 20 nm
Module Manufacturing Date: Undefined
Module Manufacturing Location: Taiwan
Module Serial Number: 00000000h
Module PCB Revision: 00h
Physical & Logical Attributes Fundamental Memory Class: DDR4 SDRAM
Module Speed Grade: DDR4-2133P downbin
Base Module Type: UDIMM (133,35 mm)
Module Capacity: 8 GB
Reference Raw Card: A0 (8 layers)
JEDEC Raw Card Designer: SK hynix
Module Nominal Height: 31 < H <= 32 mm
Module Thickness Maximum, Front: 1 < T <= 2 mm
Module Thickness Maximum, Back: 1 < T <= 2 mm
Number of DIMM Ranks: 1
Address Mapping from Edge Connector to DRAM: Standard
DRAM Device Package: Standard Monolithic
DRAM Device Package Type: 78-ball FBGA
DRAM Device Die Count: Single die
Signal Loading: Not specified
Number of Column Addresses: 10 bits
Number of Row Addresses: 16 bits
Number of Bank Addresses: 2 bits (4 banks)
Bank Group Addressing: 2 bits (4 groups)
DRAM Device Width: 8 bits
Programmed DRAM Density: 8 Gb
Calculated DRAM Density: 8 Gb
Number of DRAM components: 8
DRAM Page Size: 1 KB
Primary Memory Bus Width: 64 bits
Memory Bus Width Extension: 0 bits
DRAM Post Package Repair: Not supported
Soft Post Package Repair: Not supported
DRAM Timing Parameters Fine Timebase: 0,001 ns
Medium Timebase: 0,125 ns
CAS Latencies Supported: 9T, 10T, 11T, 12T,
13T, 14T, 15T, 16T
Minimum Clock Cycle Time (tCK min): 0,938 ns (1066,10 MHz)
Maximum Clock Cycle Time (tCK max): 1,500 ns (666,67 MHz)
CAS# Latency Time (tAA min): 13,500 ns
RAS# to CAS# Delay Time (tRCD min): 13,500 ns
Row Precharge Delay Time (tRP min): 14,061 ns
Active to Precharge Delay Time (tRAS min): 33,000 ns
Act to Act/Refresh Delay Time (tRC min): 46,500 ns
Normal Refresh Recovery Delay Time (tRFC1 min): 350,000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min): 260,000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min): 160,000 ns
Short Row Active to Row Active Delay (tRRD_S min): 3,701 ns
Long Row Active to Row Active Delay (tRRD_L min): 5,300 ns
Long CAS to CAS Delay Time (tCCD_L min): 5,356 ns
Four Active Windows Delay (tFAW min): 21,000 ns
Maximum Active Window (tMAW): 8192*tREFI
Maximum Activate Count (MAC): Unlimited MAC
DRAM VDD 1,20 V operable/endurant: Yes/Yes
Thermal Parameters Module Thermal Sensor: Not Incorporated
SPD Protocol SPD Revision: 1.0
SPD Bytes Total: 512
SPD Bytes Used: 384
SPD Checksum (Bytes 00h-7Dh): 51EDh (OK)
SPD Checksum (Bytes 80h-FDh): 58B6h (OK)
Part number details JEDEC DIMM Label: 8GB 1Rx8 PC4-2133P-UA0-10
Frequency CAS RCD RP RAS RC RRDS RRDL CCDL FAW
1067 MHz 16 15 15 36 50 4 6 6 23
1067 MHz 15 15 15 36 50 4 6 6 23
933 MHz 14 13 14 31 44 4 5 5 20
933 MHz 13 13 14 31 44 4 5 5 20
800 MHz 12 11 12 27 38 3 5 5 17
800 MHz 11 11 12 27 38 3 5 5 17
667 MHz 10 9 10 22 31 3 4 4 14
667 MHz 9 9 10 22 31 3 4 4 14
Intel Extreme Memory Profiles Profiles Revision: 2.0
Profile 1 (Certified) Enables: Yes
Profile 2 (Extreme) Enables: No
Profile 1 Channel Config: 1 DIMM/channel
XMP Parameter Profile 1 Profile 2
Speed Grade: DDR4-3200 N/A
DRAM Clock Frequency: 1600 MHz N/A
Module VDD Voltage Level: 1,35 V N/A
Minimum DRAM Cycle Time (tCK): 0,625 ns N/A
CAS Latencies Supported: 20T,19T,18T,17T,
16T,15T,14T,13T,
12T,11T,10T,9T N/A
CAS Latency Time (tAA): 9,990 ns N/A
RAS# to CAS# Delay Time (tRCD): 11,240 ns N/A
Row Precharge Delay Time (tRP): 11,240 ns N/A
Active to Precharge Delay Time (tRAS): 22,375 ns N/A
Active to Active/Refresh Delay Time (tRC): 33,740 ns N/A
Four Activate Window Delay Time (tFAW): 22,000 ns N/A
Short Activate to Activate Delay Time (tRRD_S): 3,740 ns N/A
Long Activate to Activate Delay Time (tRRD_L): 5,620 ns N/A
Normal Refresh Recovery Delay Time (tRFC1): 349,000 ns N/A
2x mode Refresh Recovery Delay Time (tRFC2): 259,000 ns N/A
4x mode Refresh Recovery Delay Time (tRFC4): 159,000 ns N/A
Show delays in clock cycles